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february 2011 doc id 16919 rev 2 1/18 18 stb120n4lf6 STD120N4LF6 n-channel 40 v, 3.1 m , 80 a dpak, d2pak stripfet? vi deepgate? power mosfet features logic level drive 100% avalanche tested application switching applications ? automotive description this product is a 40 v n-channel stripfet? vi power mosfet based on the st?s proprietary stripfet? technology, with a new gate structure. the resulting power mosfet exhibits the lowest rds(on) in all packages. figure 1. internal schematic diagram order codes v dss r ds(on) max i d stb120n4lf6 40 v 4.0 m 80 a STD120N4LF6 40 v 4.0 m 80 a dpak 1 3 d2pak 1 3 table 1. device summary order codes marking packages packaging stb120n4lf6 120n4lf6 d2pak tape and reel STD120N4LF6 dpak www.st.com
contents stb120n4lf6, STD120N4LF6 2/18 doc id 16919 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
stb120n4lf6, STD120N4LF6 electrical ratings doc id 16919 rev 2 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v gs gate-source voltage 20 v i d (1) 1. limited by wire bonding drain current (continuous) at t c = 25 c 80 a i d drain current (continuous) at t c = 100 c 80 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 110 w t stg storage temperature -55 to 175 c t j operating junction temperature table 3. thermal resistance symbol parameter value unit dpak d2pak r thj-case thermal resistance junction-case max 1.36 c/w r thj-pcb thermal resistance junction-pcb max (1) 1. when mounted on 1 inch 2 2 oz. cu board. 50 35 c/w table 4. avalanche data symbol parameter value unit i av not-repetitive avalanche current 40 a e as (1) 1. starting tj = 25 c, i d = 40 a, v dd = 25 v single pulse avalanche energy 394 mj
electrical characteristics stb120n4lf6, STD120N4LF6 4/18 doc id 16919 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 - v i dss zero gate voltage drain current (v gs = 0) v ds = 20 v v ds = 20 v,tc = 125 c - 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v - 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 - 3 v r ds(on) static drain-source on resistance v gs = 5 v, i d = 40 a 3.6 5.0 m v gs = 10 v, i d = 40 a 3.1 4.0 m table 6. dynamic symbol parameter test conditions min typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs = 0 v - 4300 650 375 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20 v, i d = 80 a v gs = 10 v (see figure 14) - 80 15 15 - nc nc nc r g intrinsic gate resistance f=1 mhz open drain 1.35
stb120n4lf6, STD120N4LF6 electrical characteristics doc id 16919 rev 2 5/18 table 7. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 20 v, i d = 40 a, r g = 4.7 , v gs = 10 v figure 15 - 15 95 - ns ns t d(off) t f turn-off delay time fall time - 125 45 - ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 80 320 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s, v dd = 32 v, t j = 150 c figure 17 - 50 85 3.5 ns nc a
electrical characteristics stb120n4lf6, STD120N4LF6 6/18 doc id 16919 rev 2 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=175c tc=25c s ingle p u l s e am0 8 964v1 i d 150 100 50 0 0 1.0 v d s (v) (a) 0.5 1.5 200 250 3 v 4v 5v v g s =10v 3 00 3 50 am0 8 965v1 i d 3 00 200 100 0 0 2 v g s (v) 4 (a) 1 3 v d s =2v am0 8 966v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0. 8 5 0.90 1.00 1.05 175 i d =1ma 0.95 am0 8 967v1 r d s (on) 2.5 2.0 0 20 i d (a) (m ) 40 60 3 .0 3 .5 v g s =10v 8 0 am0 8 96 8 v1
stb120n4lf6, STD120N4LF6 electrical characteristics doc id 16919 rev 2 7/18 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 20 q g (nc) (v) 8 0 8 40 60 10 v dd =20v i d = 8 0a 12 am0 8 969v1 c 1000 100 0.1 10 v d s (v) (pf) 1 ci ss co ss cr ss am0 8 970v1 v g s (th) 0.6 0.4 0.2 0 -75 t j (c) (norm) -25 0. 8 75 25 125 175 1.0 1.2 i d =250 a am0 8 971v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 175 0 i d =40a v g s =10v am0 8 972v1 v s d 0 20 i s d (a) (v) 8 0 40 60 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-55c t j =175c t j =25c am0 8 97 3 v1
test circuits stb120n4lf6, STD120N4LF6 8/18 doc id 16919 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
stb120n4lf6, STD120N4LF6 package mechanical data doc id 16919 rev 2 9/18 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and products status are available at: www.st.com. ecopack is an st trademark.
package mechanical data stb120n4lf6, STD120N4LF6 10/18 doc id 16919 rev 2 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
stb120n4lf6, STD120N4LF6 package mechanical data doc id 16919 rev 2 11/18 figure 19. d2pak (to-263) drawing figure 20. d2pak footprint (a) a. all dimension ar e in millimeters 0079457_r 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
package mechanical data stb120n4lf6, STD120N4LF6 12/18 doc id 16919 rev 2 table 10. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l1 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
stb120n4lf6, STD120N4LF6 package mechanical data doc id 16919 rev 2 13/18 figure 21. dpak (to-252) drawing figure 22. dpak footprint (b) b. all dimension ar e in millimeters 006 8 772_g 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1
packaging mechanical data stb120n4lf6, STD120N4LF6 14/18 doc id 16919 rev 2 5 packaging mechanical data table 11. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
stb120n4lf6, STD120N4LF6 packaging mechanical data doc id 16919 rev 2 15/18 table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
packaging mechanical data stb120n4lf6, STD120N4LF6 16/18 doc id 16919 rev 2 figure 23. tape for d2pak( to-263) and dpak (to-252) figure 24. reel for d2pak(to-263) and dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
stb120n4lf6, STD120N4LF6 revision history doc id 16919 rev 2 17/18 6 revision history table 13. document revision history date revision changes 14-dec-2009 1 first release 23-feb-2011 2 document status promoted from preliminary data to datasheet.
stb120n4lf6, STD120N4LF6 18/18 doc id 16919 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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